Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates Citation
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Articles you may be interested in Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates J. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation Carrier compensation and scattering mechanisms in Si-doped In As y P 1 y layers grown on InP substrates using intermediate In As y P 1 y step-graded buffers The properties of InAs x P 1Àx compositionally graded buffers grown by metal organic chemical vapor deposition are investigated. We report the effects of strain gradient (e/thickness), growth temperature, and strain initiation sequence (gradual or abrupt strain introduction) on threading dislocation density, surface roughness, epi-layer relaxation, and tilt. We find that gradual introduction of strain causes increased dislocation densities (>10 6 /cm 2) and tilt of the epi-layer (>0.1). A method of abrupt strain initiation is proposed which can result in dislocation densities as low as 1.01 Â 10 5 cm À2 for films graded from the InP lattice constant to InAs 0.15 P 0.85. A model for a two-energy level dislocation nucleation system is proposed based on our results.
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تاریخ انتشار 2014